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Professor Zhou Huanping and Professor Zhang Yanfeng of Peking University Science: Wafer-scale single-layer MoS₂ thin film integration for stable and efficient perovskite solar cells

2025/8/30 9:19:42 admin 阅读 178【次】

A research paper titled "Wafer-scale monolayer MoS2 film integration for stable, efficient perovskite solar cells" was published in the journal Science by a team led by Zhou Huanping and Zhang Yanfeng from Peking University. Huachao Zai is the first author, and Zhou Huanping and Zhang Yanfeng are co-corresponding authors.

Key Highlight: This paper integrates wafer-scale monolayer MoS2 interlayers at the hole transport layer (HTL)/perovskite and perovskite/electron transport layer (ETL) interfaces. The planar p-i-n PSC (0.074 cm2) and module (9.6 cm2) using the MoS2/perovskite/MoS2 configuration achieve high PCEs of 26.2% (certified steady-state PCE of 25.9%) and 22.8%, respectively.

Perovskite solar cells (PSCs) have achieved power conversion efficiencies (PCEs) exceeding 26%, but halide perovskites are susceptible to degradation during solar cell operation due to their soft lattice structure and relatively weak bonding. Even with encapsulation to isolate moisture and oxygen, perovskite instability under stresses such as heat, light irradiation, and electric fields remains a key hurdle to commercialization. Reducing ion migration is crucial for enhancing the long-term stability of perovskite photovoltaics (PVs).

To address this issue, a research team led by Zhou Huanping and Zhang Yanfeng from Peking University integrated wafer-scale continuous monolayer MoS buffers on top and bottom of the perovskite layer via a transfer process. These films physically block ion migration from the perovskite into the carrier-transporting layer and chemically stabilize the formamidinium lead iodide phase through strong coordination interactions. The formation of Pb-S bonds results in effective chemical passivation, and minority carriers are blocked through type-I band alignment. Planar p-i-n PSCs (0.074 cm²) and modules (9.6 cm²) employing a MoS²/perovskite/MoS² configuration achieved PCEs as high as 26.2% (certified steady-state PCE of 25.9%) and 22.8%, respectively. Furthermore, these devices exhibited excellent damp-heat stability (85°C and 85% relative humidity), with a PCE loss of <5% after 1200 hours, and remarkable high-temperature operational stability (85°C), with a PCE loss of <4% after 1200 hours.

This study bridges halide perovskites and two-dimensional materials through interfacial engineering, which not only expands the applications of two-dimensional materials but also provides a practical framework for improving the performance of perovskite-based optoelectronic devices. Furthermore, this study opens the possibility of constructing heterojunctions between 2D materials and flexible lattice optoelectronic materials, potentially extending their application to other fields to build efficient and stable devices.



Source:DOI: 10.1126/science.ado2351

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